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Partno	Mfg	Dc	Qty	Available	Descript
STB16NK65Z-S \|STB16NK65ZS	ST	N/a	6700	avai	N-CHANNEL 650 V
STP16NK65Z	ST	N/a	50	avai	N-CHANNEL 650 V

STB16NK65Z-S ,N-CHANNEL 650 VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTP16NK65Z 650 V < 0.50 Ω 13 A 190 WSTB16NK65Z- ..
STB16NS25 ,N-CHANNEL 250VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 250 VDS GSV Drain- ..
STB16NS25T4 ,N-CHANNEL 250VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 250 VDS GSV Drain- ..
STB16PF06L ,P-CHANNEL 60VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STB16PF06LT4 ,P-CHANNEL 60VELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On/OffSymbol Parameter ..
STB170NF04 ,N-channel 40 V, 4.4 mOhm typ., 80 A STripFET(TM) II Power MOSFET in a D2PAK packageElectrical characteristics(T =25°C unless otherwise specified).CASETable 4. On/offSymbol Parameter ..
STV0196 , QPSK/BPSK DEMODULATOR AND FEC IC
STV0288 ,DVB-S and DIRECTV QPSK receiver with autoscan featureapplications.converters for I-input and Q-input, a QPSKdemodulator, and a forward error correction ..
STV0297E ,QAM demodulator IC with A/D converterFeatures■ Decodes ITU-T J.83-Annexes A/Cand DVB-C bit streams ■ Processes Japanese transport stream ..
STV0297J ,UNIVERSAL DIGITAL CABLE DEMODULATOR STV0297J® STV0297JUniversal digital cable demodulatorDATA BRIEFDescriptionThe STV0297J is a highly integrat ..
STV0299B ,QPSK/BPSK LINK ICSTV0299BQPSK/BPSK LINK IC

STB16NK65Z-S-STP16NK65Z
N-CHANNEL 650 V
1/11September 2004
STP16NK65Z
STB16NK65Z-S
N-CHANNEL 650V - 0.38Ω - 13A TO-220 / I2 SPAK
Zener - Protected SuperMESH™ MOSFET
Rev. 2
STP16NK65Z - STB16NK65Z-S
2/11
Table 3: Absolute Maximum ratings
(*) Pulse width limited by safe operating area
(1) ISD ≤ 13 A, di/dt ≤ 200 A/µs, V DD ≤ V(BR)DSS,Tj ≤ TJMAX
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied fromgate to source. In this respect the Zener voltage ia appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
3/11
STP16NK65Z - STB16NK65Z-S
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Table 8: Dynamic
Table 9: Source Drain Diode
(1) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
(2) Pulse width limited by safe operating area
(*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
STP16NK65Z - STB16NK65Z-S
4/11
Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 5: Transconductance
Figure 6: Thermal Impedance
Figure 7: Transfer Characteristics
Figure 8: Static Drain-source On Resistance
5/11
STP16NK65Z - STB16NK65Z-S
Figure 9: Gate Charge vs Gate-source Voltage
age vs Temperature
Figure 11: Dource-Drain Diode Forward Char-
acteristics
Figure 12: Capacitance Variations
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 14: Normalized BVdss vs Temperature
STP16NK65Z - STB16NK65Z-S
6/11
Figure 15: Avalanche Energy vs Starting Tj

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