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STB16NS25T4 ,N-CHANNEL 250VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 250 VDS GSV Drain- ..
STB16PF06L ,P-CHANNEL 60VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
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STB16NF06L
N-CHANNEL 60V
1/9February 2002
STB16NF06LN-CHANNEL 60V - 0.07 Ω - 16A D2 PAK
STripFET™ POWER MOSFET TYPICAL RDS(on) = 0.07Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 oC LOW THRESHOLD DRIVE SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS MOTOR CONTROL, AUDIO AMPLIFIERS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. (1) ISD ≤ 16A, di/dt ≤ 210A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC, ID = 8A, VDD = 30V
INTERNAL SCHEMATIC DIAGRAM
STB16NF06L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (1)
DYNAMIC
3/9
STB16NF06LSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB16NF06LOutput Characteristics Transfer Characteristics
5/9
STB16NF06LNormalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature . .
STB16NF06L
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
