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STB140NF75STN/a23avaiN-CHANNEL 75V
STP140NF75 |STP140NF75ST N/a315avaiN-CHANNEL 75V
STP140NF75. |STP140NF75STN/a19avaiN-CHANNEL 75V


STP140NF75 ,N-CHANNEL 75VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STP140NF75. ,N-CHANNEL 75VSTB140NF75 STP140NF75STB140NF75-1N-CHANNEL 75V - 0.0065 Ω -120A D²PAK/I²PAK/TO-220STripFET™ II POWE ..
STP14NF10 ,N-CHANNEL 100V 0.115 OHM 15A D2PAK/TO-220/TO-220FP LOW GATE CHARGE STRIPFET II POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTB14NF10 STP14NF10FPSTP14NF10V Drain-source Vol ..
STP14NF10FP ,N-CHANNEL 100V 0.115 OHM 15A D2PAK/TO-220/TO-220FP LOW GATE CHARGE STRIPFET II POWER MOSFETSTB14NF10STP14NF10 STP14NF10FP2N-CHANNEL 100V - 0.115 Ω - 15A TO-220/TO-220FP/D PAKLOW GATE CHARGE ..
STP14NF12FP ,N-CHANNEL 120V
STP14NK50Z ,N-CHANNEL 500V 0.34 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO247 ZENER-PROTECTED SUPERMESH POWER MOSFETFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
SZ3536 , SURFACE MOUNT SILICON ZENER DIODES
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SZ4511 , SURFACE MOUNT SILICON ZENER DIODES
SZ4512 , SURFACE MOUNT SILICON ZENER DIODES
SZ4513 , SURFACE MOUNT SILICON ZENER DIODES
SZ4514 , SURFACE MOUNT SILICON ZENER DIODES


STB140NF75-STP140NF75 -STP140NF75.
N-CHANNEL 75V
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AUTOMOTIVE SPECIFIC

December 2002
STB140NF75 STP140NF75
STB140NF75-1

N-CHANNEL 75V - 0.0065 Ω -120A D²PAK/I²PAK/TO-220
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.0065 Ω SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE
DESCRIPTION

This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
HIGH CURRENT, HIGH SWITCHING SPEED SOLENOID AND RELAY DRIVERS AUTOMOTIVE 42V BATTERY DRIVERS
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) ISD ≤120A, di/dt ≤400A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 60 A, VDD = 30V
STB140NF75 STP140NF75 STB150NF75-1
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF
ON (*)
DYNAMIC
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STB140NF75 STP140NF75 STB150NF75-1

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB140NF75 STP140NF75 STB150NF75-1
Output Characteristics Transfer Characteristics
Transconductance
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STB140NF75 STP140NF75 STB150NF75-1

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
STB140NF75 STP140NF75 STB150NF75-1
Allowable Iav vs. Time in Avalanche

Thermal Resistance Rthj-a vs PCB Copper Area Max Power Dissipation vs PCB Copper Area
The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,
under the following conditions:
PD(AVE) = 0.5 * (1.3 * BVDSS * IAV)
EAS(AR) = PD(AVE) * tAV
Where:
IAV is the Allowable Current in Avalanche
PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)
tAV is the Time in Avalanche
To derate above 25 oC, at fixed IAV, the following equation must be applied:
IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth)
Where:
Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV .
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STB140NF75 STP140NF75 STB150NF75-1
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