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STB13NK60ZT4
N-CHANNEL 600V
1/14February 2003
STP13NK60Z/FP, STB13NK60Z
STB13NK60Z-1, STW13NK60ZN-CHANNEL 600V-0.48Ω-13A TO-220/FP/D2 PAK/I2 PAK/TO-247
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z2/14
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤13A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE(#) When mountedon minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/14
STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z4/14
Thermal Impedance For TO-247Safe Operating Area For TO-247
Thermal Impedance For TO-220FPSafe Operating Area For TO-220FP
Safe Operating Area For TO-220/D2 PAK/I2 PAK Thermal Impedance For TO-220/D2 PAK/I2 PAK
5/14
STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z
Capacitance VariationsGate Chargevs Gate-source Voltage
Output Characteristics
Transconductance
STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z6/14
Maximum Avalanche Energyvs Temperature
Normalized BVDSSvs TemperatureSource-drain Diode Forward Characteristics
Normalized On Resistancevs TemperatureNormalized Gate Threshold Voltagevs Temp.
7/14
STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z
Fig.5: Test Inductive
Fig.4: Gate Charge test Circuit
Fig.
Fig.3: Switching
Resistive Load
