STB130NS04ZBT4 ,N-CHANNEL CLAMPEDAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) CLAMPED VDS GSVDr ..
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STB130NS04ZBT4
N-CHANNEL CLAMPED
1/12February 2005
STP130NS04ZB
STB130NS04ZB - STW130NS04ZBN-CHANNEL CLAMPED - 7 mΩ - 80A TO-220/D²PAK/TO-247
FULLY PROTECTED MESH OVERLAY™ MOSFET
Rev. 2
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB2/12
Table 3: Absolute Maximum ratings ) Pulse width limited by safe operating area
Table 4: Thermal Data (*)When mounted on 1 inch² FR4 2oZ Cu
Table 5: Avalanche Characteristics
3/12
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Table 7: Dynamic
Table 8: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB4/12
Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 5: Transconductance
Figure 6: Thermal Impedance
Figure 8: Static Drain-source On Resistance
5/12
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
Figure 9: Gate Charge vs Gate-source Voltage
age vs Temperature
Figure 11: Capacitance Variations
Figure 12: Normalized On Resistance vs Tem-
perature
acteristics
Figure 14: Normalized BVDSS vs Temperature
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB6/12
Figure 15: Switching Times Test Circuit For
Resistive Load
Figure 16: Test Circuit For Diode Recovery Be-
haviour
Figure 17: Gate Charge Test Circuit
