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STB13005
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
ST13005
STB13005-1HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS MEDIUM VOLTAGE CAPABILITY NPN TRANSISTORS LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION VERY HIGH SWITCHING SPEED THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
APPLICATIONS: ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES
DESCRIPTION The devices are manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
They use a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
June 2001
ABSOLUTE MAXIMUM RATINGS1/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300μs, duty cycle = 1.5 %
Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
ST13005 / STB13005-12/8
Safe Operating Areas
DC Current Gain
Collector Emitter Saturation Voltage
Derating Curve
DC Current Gain
Base Emitter Saturation Voltage
ST13005 / STB13005-13/8
Inductive Fall Time Inductive Storage Time
Resistive Fall Time Resistive Load Storage Time
Reverse Biased SOA
ST13005 / STB13005-14/8
Figure 1: Inductive Load Switching Test Circuit.
Figure 2: Resistive Load Switching Test Circuit.
ST13005 / STB13005-15/8
ST13005 / STB13005-16/8
