IC Phoenix
 
Home ›  SS99 > STB11NM60FD-STB11NM60FD-1-STB11NM60FDT4,N-CHANNEL 600V
STB11NM60FD-STB11NM60FD-1-STB11NM60FDT4 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
STB11NM60FDSTN/a4800avaiN-CHANNEL 600V
STB11NM60FD-1 |STB11NM60FD1STN/a800avaiN-CHANNEL 600V
STB11NM60FDT4STN/a4800avaiN-CHANNEL 600V


STB11NM60FDT4 ,N-CHANNEL 600VAPPLICATIONS

STB11NM60FD-STB11NM60FD-1-STB11NM60FDT4
N-CHANNEL 600V
1/13February 2004
STP11NM60FD- STB11NM60FD
STP11NM60FDFP- STB11NM60FD-1

N-CHANNEL 600V-0.40Ω-11ATO-220/TO-220FP/I2 PAK/D2 PAK
FDmesh™Power MOSFET (with FAST DIODE) TYPICAL RDS(on)= 0.40Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION

The FDmesh™ associates all advantagesof re-
duced on-resistance and fast switching with anin-
trinsic fast-recovery body diode.Itis therefore
strongly recommendedfor bridge topologies,in par-
ticular ZVS phase-shift converters.
APPLICATIONS
ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
ORDER CODES
STP11NM60FD- STP11NM60FDFP- STB11NM60FD- STB11NM60FD-1
2/13
ABSOLUTE MAXIMUM RATINGS
)Pulse width limitedby safe operating area
(1)ISD<11A, di/dt<400A/µs,V DD(*)Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
3/13
STP11NM60FD- STP11NM60FDFP- STB11NM60FD- STB11NM60FD-1

DYNAMIC
Note:1. Pulsed: Pulse duration=300µs, duty cycle1.5%. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300µs, duty cycle1.5%. Pulse width limitedby safe operating area.
STP11NM60FD- STP11NM60FDFP- STB11NM60FD- STB11NM60FD-1
4/13
Safe Operating for TO-220/I2 PAK/D2 PAK Safe Operating Area for TO-220FP
Thermal Impedance for TO-220FPThermal Impedance for TO-220/I2 PAK
Transfer CharacteristicsOutput Characteristics
5/13
STP11NM60FD- STP11NM60FDFP- STB11NM60FD- STB11NM60FD-1
Static Drain-source On ResistanceTransconductance
Gate Capacitance
Normalized On Resistancevs TemperatureNormalized Gate Thereshold Voltagevs Temp.
STP11NM60FD- STP11NM60FDFP- STB11NM60FD- STB11NM60FD-1
6/13
Source-drain Diode Forward Characteristics
7/13
STP11NM60FD- STP11NM60FDFP- STB11NM60FD- STB11NM60FD-1
Fig.5:
Test For Inductive
Fig.4:
Gate Charge test Circuit
Fig.3:
Switching
Resistive Load
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED