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STB11NK50Z
N-CHANNEL 500V
1/12June 2003
STP11NK50Z- STP11NK50ZFP
STB11NK50ZN-CHANNEL 500V- 0.48Ω - 10A TO-220/TO-220FP/D2 PAK
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY ADD SUFFIX “T4” FOR ORDERINGIN TAPE&
REEL(D2 PAK VERSION)
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP11NK50Z- STP11NK50ZFP- STB11NK50Z2/12
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤10A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/12
STP11NK50Z- STP11NK50ZFP- STB11NK50Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP11NK50Z- STP11NK50ZFP- STB11NK50Z4/12
Safe Operating Area For TO-220/ D2PAK
Output Characteristics
Thermal Impedance For TO-220/ D2PAK
Safe Operating Area For TO-220FP
5/12
STP11NK50Z- STP11NK50ZFP- STB11NK50Z
Normalized Gate Threshold Voltagevs Temp. Normalized On Resistancevs Temperature
Gate Chargevs Gate-source Voltage Capacitance Variations
Static Drain-source On ResistanceTransconductance
STP11NK50Z- STP11NK50ZFP- STB11NK50Z6/12
Source-drain Diode Forward Characteristics Normalized BVDSSvs Temperature
Maximum Avalanche Energyvs Temperature
