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STB11NK50Z ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2TO-220FPTO-220 / D PAKV Drain-source Voltage (V ..
STB11NM60 ,N-CHANNEL 600VSTP11NM60 - STP11NM60FPSTB11NM60 - STB11NM60-12 2N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D PAK/I ..
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STV0042A/Z ,ANALOG SATELLITE SOUND AND VIDEO PROCESSORElectrical Characteristics . 30Chapter 9 Package Mechanical Data .35Chapter 10 Revision His ..
STB11NK40ZT4
N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
1/12April 2003
STP11NK40Z- STP11NK40ZFP
STB11NK40ZN-CHANNEL 400V- 0.49Ω - 9A TO-220/TO-220FP/D2 PAK
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 0.49Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP11NK40Z- STP11NK40ZFP- STB11NK40Z
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤9A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
STP11NK40Z- STP11NK40ZFP- STB11NK40Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP11NK40Z- STP11NK40ZFP- STB11NK40Z
Safe Operating Area For TO-220/D2PAK
Safe Operating Area For TO-220FP
Transfer CharacteristicsOutput Characteristics
STP11NK40Z- STP11NK40ZFP- STB11NK40Z
Normalized On Resistancevs Temperature
Static Drain-source On Resistance
Gate Chargevs Gate-source Voltage
Normalized Gate Threshold Voltagevs Temp.
Capacitance Variations
Transconductance
STP11NK40Z- STP11NK40ZFP- STB11NK40Z
Source-drain Diode Forward Characteristics
Maximum Avalanche Energyvs Temperature
Normalized BVDSSvs Temperature
