STP10NK60ZFP ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitTO-220/ TO-220FP TO-2472 2D PAK/I PAKV Drain-sou ..
STP10NK60ZFP. ,N-CHANNEL 600VSTP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z2 2N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D PAK/I PAK/TO-247Zene ..
STP10NK70Z ,N-CHANNEL 700 V
STP10NM65N ,N-channel 650V
STP11NB40FP ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
STP11NK40Z ,N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETSTP11NK40Z - STP11NK40ZFPSTB11NK40Z2N-CHANNEL 400V - 0.49Ω - 9A TO-220/TO-220FP/D PAKZener-Protecte ..
SYAS-1 ,Circuits - Electronic Attenuators/Switches
SZ3536 , SURFACE MOUNT SILICON ZENER DIODES
SZ4510 , SURFACE MOUNT SILICON ZENER DIODES
SZ4511 , SURFACE MOUNT SILICON ZENER DIODES
SZ4512 , SURFACE MOUNT SILICON ZENER DIODES
SZ4513 , SURFACE MOUNT SILICON ZENER DIODES
STB10NK60Z-STB10NK60Z-1-STP10NK60Z-STP10NK60ZFP -STP10NK60ZFP.-STW10NK60Z
N-CHANNEL 600V
1/14September 2002
STP10NK60Z/FP, STB10NK60Z/-1
STW10NK60ZN-CHANNEL 600V-0.65Ω-10A TO-220/FP/D2 PAK/I2 PAK/TO-247
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z
ABSOLUTE MAXIMUM RATINGS ) Pulse width limited by safe operating area
(1) ISD ≤10A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
(*) Limited only by maximum temperature allowed
3/14
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z
Thermal Impedance For TO-220FP
Safe Operating Area For TO-220FP
Thermal Impedance For TO-247Safe Operating Area For TO-247
Safe Operating Area For TO-220/D2PAK/I2PAK
5/14
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z
Output Characteristics
Transconductance Static Drain-source On Resistance
Transfer Characteristics
Capacitance VariationsGate Charge vs Gate-source Voltage
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.
Normalized BVDSS vs Temperature
Maximum Avalanche Energy vs Temperature
7/14
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test CircuitFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
