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STB100NH02LSTN/a500avaiN-CHANNEL 24V


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STB100NH02L
N-CHANNEL 24V
1/11February 2003
STB100NH02L

N-CHANNEL 24V - 0.0052 Ω - 60A D²PAK
STripFET™ III POWER MOSFET TYPICAL RDS(on) = 0.0052 Ω @ 10 V TYPICAL RDS(on) = 0.007 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION

The STB100NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
applications where high efficiency is to be achieved.
APPLICATIONS
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
INTERNAL SCHEMATIC DIAGRAM
STB100NH02L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF
ON (5)
DYNAMIC
3/11
STB100NH02L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE

(1) Garanted when external Rg=4.7 Ω and tf < tfmax. (5) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2) Value limited by wire bonding (6) Qoss = Coss*Δ Vin , Coss = Cgd + Cds . See Appendix A
(3) Pulse width limited by safe operating area. (7) Gate charge for synchronous operation
(4) Starting Tj = 25 oC, ID = 30A, VDD = 15V
ELECTRICAL CHARACTERISTICS (continued)

Safe Operating Area
STB100NH02L
Output Characteristics Transfer Characteristics
Transconductance
5/11
STB100NH02L

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit

And Diode Recovery Times
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