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ST83003
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
ST83003HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION VERY HIGH SWITCHING SPEED
APPLICATIONS: ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES
DESCRIPTION The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The ST83003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the ST93003, its
complementary PNP transistor.
October 2002
ABSOLUTE MAXIMUM RATINGS1/7
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300μs, duty cycle = 1.5 %
ST830032/7
Safe Operating Areas
DC Current Gain
Collector Emitter Saturation Voltage
Derating Curve
DC Current Gain
Base Emitter Saturation Voltage
ST830033/7
Resistive Load Fall Time Resistive Load Storage Time
Inductive Load Fall Time Inductive Load Storage Time
Reverse Biased SOA
ST830034/7
Figure 1: Inductive Load Switching Test Circuit.
Figure 2: Resistive Load Switching Test Circuit.
ST830035/7
ST830036/7
