SSW2N60B ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 2.0A, 600V, R = 5.0Ω @V = 10 VDS(on) ..
SSW2N60BTM ,600V N-Channel B-FET / Substitute of SSW2N60AFeaturesThese N-Channel enhancement mode power field effect • 2.0A, 600V, R = 5.0Ω @V = 10 VDS(on) ..
SSW7N60B ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 7.0A, 600V, R = 1.2Ω @V = 10 VDS(on) ..
SSW7N60BTM ,600V N-Channel B-FET / Substitute of SSW7N60AFeaturesThese N-Channel enhancement mode power field effect • 7.0A, 600V, R = 1.2Ω @V = 10 VDS(on) ..
SSX35ACB , Trusted platform module (TPM)
ST ,SuperTan庐 Wet Tantalum Capacitors with Hermetic Seal, FEATURES: Very High Capacitance, 10 to 1800碌F, 25 to 125VDC, -55掳C to + 125掳C, Very Low ESR and High Ripple Current , contact wettants Document Number: 430002 Revision 17-Oct-02ST®SuperTan Wet Tantalum Capacitors w ..
STK4199MK2 ,3-channel AF Power Amplifier (+- Dual Power Supply) 25W+50W+25WFeatures. Uses substrate with IMST (insulated metal substratetechnology). The ethral power supply p ..
STK4201II ,2ch AF Power Amplifier (Split Power Supply) (60W + 60W min, THD = 0.4%)Features Package Dimensions. Muting circuit built-in to isolate all types of shock noise unit: mm. ..
STK4204MK5 , Features of the IMST Hybird ICs
STK4205MK2 , Features of the IMST Hybird ICs
STK4211 ,2ch./1packge, +- Power Supply Built-in Muting Circuit 25W/ch. ~ 70W/ch. THD=0.02%Ordering number: EN 4610AThick Film Hybrid IC/ STK4211II2ch AF Power Amplifier (Split Power Supply) ..
STK4211II ,2ch AF Power Amplifier (Split Power Supply) (70W + 70W min, THD = 0.4%)Features Package Dimensions. Muting circuit built-in to isolate all types of shock noise unit: mm. ..
SSW2N60B
600V N-Channel MOSFET
SSW2N60B / SSI2N60B November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.0A, 600V, R = 5.0Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12.5 nC) planar, DMOS technology. • Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● 2 2 GS D -PAK I -PAK GS D SSW Series SSI Series !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter SSW2N60B / SSI2N60B Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 2.0 A D C - Continuous (T = 100°C) 1.3 A C I (Note 1) Drain Current - Pulsed 6.0 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 120 mJ AS I Avalanche Current (Note 1) 2.0 A AR E (Note 1) Repetitive Avalanche Energy 5.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 54 W C - Derate above 25°C 0.43 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.32 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. B, November 2001
