| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| SST29EE010-70-4C-EH |
SST |
N/a |
3500 |
 |
1 Mbit (128K x8) Page-Write EEPROM |
SST29EE010-70-4C-EHE GLS, 1 Mbit (128K x8) Page-Write EEPROM
SST29EE010-70-4C-NH SST, 1 Mbit (128K x8) Page-Write EEPROM
SST29EE010-70-4C-NHE SST, 1 Mbit (128K x8) Page-Write EEPROM
SST29EE010-70-4C-NHE. SST
SST29EE010-70-4C-NHE/ SST
SST29EE010-70-4C-EH , 1 Mbit (128K x8) Page-Write EEPROM
SST29EE010-70-4C-PH , 1 Mbit (128K x8) Page-Write EEPROM
SST29EE010-70-4C-PHE , 1 Mbit (128K x8) Page-Write EEPROM
SST29EE010-70-4C-PHE , 1 Mbit (128K x8) Page-Write EEPROM
SST29EE010-70-4C-PHE , 1 Mbit (128K x8) Page-Write EEPROM
STD6N10 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD6N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD6N10 100 V < 0.45 Ω ..
STD6N62K3 ,N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in DPAKElectrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STD6NC40 ,N-CHANNEL 400V 0.75 OHM 5A DPAK/IPAK POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 400 VDS GSV Drain ..
