| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| SST12LP15A |
SST |
N/a |
2597 |
 |
2.4 GHz High-Power and High-Gain Power Amplifier |
SST12LP15AQVCE SST
SST12LP15A-QVCE SST, 2.4 GHz High-Power and High-Gain Power Amplifier
SST12LP15B-QVCE SST
SST12LP15-QVCE SST, 2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP17E-QU8E SST
SST12LP19E-QX8E MICROCHIP
SST13DT00W04 SST
SST12LP15A , 2.4 GHz High-Power and High-Gain Power Amplifier
SST13LP05-MLCF , 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module
SST174 ,P-Channel JFET SwitchS-04030—Rev. E, 04-Jun-019-1J/SST174/175/176/177 SeriesVishay Siliconix 1Gate-D ..
SST174 ,P-Channel JFET SwitchS-04030—Rev. E, 04-Jun-019-3gos – Output Conductance (S)I – Saturation Drain Current (mA)DSSJ/SST1 ..
SST175 ,P-Channel, Single, JFET Switch(SMT)S-04030—Rev. E, 04-Jun-019-2J/SST174/175/176/177 SeriesVishay Siliconix ! ..
STD17N05L ,NSTD17N05LSTD17N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on ..
STD17N06 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD17N05STD17N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD17N05 50 V ..
STD17N06L ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD17N05LSTD17N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on ..
