SSS7N60B ,600V N-Channel MOSFETSSP7N60B/SSS7N60BSSP7N60B/SSS7N60B600V N-Channel MOSFET
SST108 ,SwitchS-04028—Rev. E, 04-Jun-017-3Switchng Time (ns)r – Drain-Source On-Resistance ( Ω ) r – Drain-Source ..
SST109 ,SwitchS-04028—Rev. E, 04-Jun-017-2I – Saturation Drain Current (mA)DSSJ/SST108 SeriesVishay Siliconix ..
SST110 ,Low Noise N-Channel JFET Switch (SMT)S-04028—Rev. E, 04-Jun-017-4I – Gate Leakage g – Forward Transconductance (mS) Capacitance (pF)fsGe ..
SST111 ,High Speed N-Channel JFET Switch(SMT)S-04028—Rev. E, 04-Jun-017-4I(mS) – Gate LeakageG en – Noise Voltage nV / Hzg – Forward Transco ..
SST112 ,N-Channel JFET SwitchS-04028—Rev. E, 04-Jun-017-2I – Saturation Drain Current (mA)DSSJ/SST111 SeriesVishay Siliconix ..
STD123UF , NPN Silicon Transistor
STD123UF , NPN Silicon Transistor
STD12N05 ,NSTD12N05STD12N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD12N05 50 V ..
STD12N06 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD12N05STD12N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD12N05 50 V ..
STD12NE06 , N - CHANNEL 60V - 0.08ohm - 12A - IPAK/DPAK SINGLE FEATURE SIZE POWER MOSFET
STD12NE06 , N - CHANNEL 60V - 0.08ohm - 12A - IPAK/DPAK SINGLE FEATURE SIZE POWER MOSFET
SSS7N60B
600V N-Channel MOSFET
SSP7N60B/SSS7N60B SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.0A, 600V, R = 1.2Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 38 nC) planar, DMOS technology. • Low Crss ( typical 23 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • TO-220F package isolation = 4.0kV (Note 6) suited for high efficiency switch mode power supplies. D G TO-220 TO-220F G D S G D S SSP Series SSS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter SSP7N60B SSS7N60B Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 7.0 7.0 * A D C - Continuous (T = 100°C) 4.4 4.4 * A C I (Note 1) Drain Current - Pulsed 28 28 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 420 mJ AS I Avalanche Current (Note 1) 7.0 A AR E (Note 1) Repetitive Avalanche Energy 14.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 147 48 W D C - Derate above 25°C 1.18 0.38 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter SSP7N60B SSS7N60B Units R Thermal Resistance, Junction-to-Case Max. 0.85 2.6 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W θJA ©2002 Rev. B, June 2002
