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SSS4N60AS FSC|Fairchild Semiconductor N/a 45 Advanced Power MOSFET



SSS4N60AS KIA4N60 KIA
SSS4N60B FSC ,FeaturesThese N-Channel enhancement mode power field effect • 4.0A, 600V, R = 2.5Ω @V = 10 VDS(on) GStransistors are produced using Fairchild’s propr ..
SSS4N60B FAIRCHILD,FeaturesThese N-Channel enhancement mode power field effect • 4.0A, 600V, R = 2.5Ω @V = 10 VDS(on) GStransistors are produced using Fairchild’s propr ..
SSS4N60B FAIFCHIL,SSP4N60B/SSS4N60BSSP4N60B/SSS4N60B600V N-Channel MOSFET
SSS4N60B FAIRCHIL,FeaturesThese N-Channel enhancement mode power field effect • 4.0A, 600V, R = 2.5Ω @V = 10 VDS(on) GStransistors are produced using Fairchild’s propr ..
SSS4N60AS , Advanced Power MOSFET
SSS4N60B ,600V N-Channel MOSFETSSP4N60B/SSS4N60BSSP4N60B/SSS4N60B600V N-Channel MOSFET
SSS4N80AS , Advanced Power MOSFET
SSS5N80A , Advanced Power MOSFET
SSS5N80A , Advanced Power MOSFET
STD100NH02LT4 ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD100NH03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD100NH03LT4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
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