SSS1N60B ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 1.0A, 600V, R = 12Ω @V = 10 VDS(on) G ..
SSS2N60A , Advanced Power MOSFET
SSS2N60A , Advanced Power MOSFET
SSS2N60B ,600V N-Channel MOSFETSSP2N60B/SSS2N60BNovember 2001SSP2N60B/SSS2N60B600V N-Channel MOSFET
SSS3N80A , ADVANCED POWER MOSFET
SSS45N20B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 35A, 200V, R = 0.065Ω @V = 10 VDS(on) ..
STCN75DS2F ,Digital temperature sensor and thermal watchdogFunctional description . . . . . . 153.1 Registers and register set formats . . . . . . 153 ..
STCS05ADR ,0.5 A max constant current LED driverElectrical characteristics . . . . . 65 Timing . . . . . 76 Typical performance characte ..
STCS05DR ,0.5A MAX CONSTANT CURRENT LED DRIVERElectrical characteristics . . . . . 65 Timing . . . . . 76 Typical performance characte ..
STCS2 ,2A MAX CONSTANT CURRENT LED DRIVERElectrical characteristics . . . . . 65 Timing . . . . . 76 Typical performance characte ..
STCS2ASPR ,2A MAX CONSTANT CURRENT LED DRIVERElectrical characteristics . . . . . 65 Timing . . . . . 76 Typical performance characte ..
STD100N03LT4 , N-CHANNEL 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET™ MOSFET
SSS1N60B
600V N-Channel MOSFET
SSP1N60B/SSS1N60B November 2001 SSP1N60B/SSS1N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.0A, 600V, R = 12Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.9 nC) planar, DMOS technology. • Low Crss ( typical 3.6 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D G TO-220 TO-220F G D S G D S SSP Series SSS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter SSP1N60B SSS1N60B Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 1.0 1.0 * A D C - Continuous (T = 100°C) 0.6 0.6 * A C I (Note 1) Drain Current - Pulsed 3.0 3.0 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 50 mJ AS I Avalanche Current (Note 1) 1.0 A AR E (Note 1) Repetitive Avalanche Energy 3.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 34 17 W D C - Derate above 25°C 0.27 0.13 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter SSP1N60B SSS1N60B Units R Thermal Resistance, Junction-to-Case Max. 3.67 7.48 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W θJA ©2001 Rev. A, November 2001
