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SSM6P54TUTOSHIBAN/a986avaiSmall-signal MOSFET 2 in 1


SSM6P54TU ,Small-signal MOSFET 2 in 1Absolute Maximum Ratings (Ta = 25°C) 43Characteristics Symbol Rating Unit Drain-Source voltage V -2 ..
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SSM6P54TU
Small-signal MOSFET 2 in 1
SSM6P54TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P54TU
High-Speed Switching Applications Power Management Switch Applications 1.5 V drive Suitable for high-density mounting due to compact package Low on-resistance : Ron = 228 mΩ (max) (@ VGS = -2.5 V)
: Ron = 350 mΩ (max) (@ VGS = -1.8 V)
: Ron = 555 mΩ (max) (@ VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25°C)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C)

Unit : mm
Weight: 7.0 mg (typ.)
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