SSM6P09FU ,Field Effect Transistor Silicon P Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low Drain-Source ON resistance. : R = 2.7 Ω (max) (@V ..
SSM6P15FE ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Symbol Test Condition MIN. TY ..
SSM6P15FU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Symbol Test Condition MIN. TY ..
SSM6P16FE ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Symbol Test Condition MIN. T ..
SSM6P16FU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Symbol Test Condition MIN. TY ..
SSM6P35FU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Common to the Q1, Q2) Characteristics Symbol Test Condition ..
STC128 , NPN Silicon Transistor
STC12C5404 , STC12C5410AD
STC12C5406AD , STC12C5410AD
STC13003 , NPN POWER TRANSISTORS
STC13007 , NPN POWER TRANSISTORS
STC2073F , NPN Silicon Transistor
SSM6P09FU
Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications
SSM6P09FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P09FU High Speed Switching Applications Small package Low Drain-Source ON resistance.
: Ron = 2.7 Ω (max) (@VGS = −10 V)
: Ron = 4.2 Ω (max) (@VGS = −4 V)
Maximum Ratings (Ta ��� � 25°C) (Q1, Q2 Common)
Note1: Total rating, mounted on FR4 board
(25.4 mm � 25.4 mm � 1.6 t, Cu Pad: 0.32 mm2 � 6) Figure 1.
Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 6.8 mg (typ.)
