SSM6N7002BFU ,Small-signal MOSFET 2 in 1Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) 34Characteristics Symbol Rating Unit Drain-sou ..
SSM6N7002BFU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Ty ..
SSM6P05FU ,Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching ApplicationsApplications Small package Low on resistance : R = 3.3 Ω (max) (@V = −4 V) on GS : R = 4 ..
SSM6P09FU ,Field Effect Transistor Silicon P Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low Drain-Source ON resistance. : R = 2.7 Ω (max) (@V ..
SSM6P15FE ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Symbol Test Condition MIN. TY ..
SSM6P15FU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Symbol Test Condition MIN. TY ..
STC03DE170 ,HYBRID EMITTER SWITCHED BIPOLAR TRANSISTORFeatures Figure 1: PackageV I RCS(ON) C CS(ON)1 V 1.8 A 0.55 Wn LOW EQUIVALENT ON RESISTANCEn VERY ..
STC04IE170HP ,Monolithic emitter switched bipolar transistor ESBT? 1700 VElectrical characteristicsSymbol Parameter Test conditions Min. Typ. Max. UnitCollector cut-off cur ..
STC128 , NPN Silicon Transistor
STC12C5404 , STC12C5410AD
STC12C5406AD , STC12C5410AD
STC13003 , NPN POWER TRANSISTORS
SSM6N7002BFU
Small-signal MOSFET 2 in 1
SSM6N7002BFU
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
SSM6N7002BFU High-Speed Switching Applications
Analog Switch Applications
• Small package Low ON-resistance : RDS(ON) = 3.3 Ω (max) (@VGS = 4.5 V)
: RDS(ON) = 2.6 Ω (max) (@VGS = 5 V)
: RDS(ON) = 2.1 Ω (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1:Total rating, mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.32mm2 × 6)
Marking Equivalent Circuit (top view) Unit: mm
Weight: 6.8 mg (typ.)
6 5 4 2 3 4 3
