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SSM6N48FUTOSHIBAN/a12000avaiSmall-signal MOSFET 2 in 1


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SSM6N48FU
Small-signal MOSFET 2 in 1
SSM6N48FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
SSM6N48FU

Load Switching Applications • 2.5-V drive
• N-ch 2-in-1
• Low ON-resistance: RDS(ON) = 3.2 Ω (max) (@VGS = 4.0 V) RDS(ON) = 5.4 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.32mm2 × 6)
Marking Equivalent Circuit (top view)

Unit: mm
Weight: 6.8 mg (typ.)
6 5 4
1 2 3
6 5 4
1 2 3
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