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SSM6N44FETOSHIBAN/a4000avaiSmall-signal MOSFET 2 in 1


SSM6N44FE ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Ty ..
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SSM6N44FE
Small-signal MOSFET 2 in 1
SSM6N44FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N44FE

High Speed Switching Applications
Analog Switching Applications • Compact package suitable for high-density mounting Low ON-resistance : RDS(ON) = 4.0 Ω (max) (@VGS = 4 V) : RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6)
Marking Equivalent Circuit (top view)

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 3 mg (typ.)
6 5 4
1 2 3
6 5 4
1 2 3
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