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SSM6N43FUTOSN/a9000avaiSmall-signal MOSFET 2 in 1


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SSM6N43FU
Small-signal MOSFET 2 in 1
SSM6N43FU
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM6N43FU
High-Speed Switching Applications
• 1.5-V drive Low ON-resistance : RDS(ON) = 1.52 Ω (max) (@VGS = 1.5V)
: RDS(ON) = 1.14 Ω (max) (@VGS = 1.8V)
: RDS(ON) = 0.85 Ω (max) (@VGS = 2.5V)
: RDS(ON) = 0.66 Ω (max) (@VGS = 4.5V)
: RDS(ON) = 0.63 Ω (max) (@VGS = 5.0V)
Absolute Maximum Ratings (Ta = 25°C) (Q1,Q2 Common)

Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking Equivalent Circuit (top view)

6 5 4
1 2 3 4 3
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