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SSM6N35FU
Small-signal MOSFET 2 in 1
SSM6N35FU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N35FU High-Speed Switching Applications Analog Switch Applications
• 1.2-V drive
• N-ch 2-in-1
• Low ON-resistance: RDS(ON) = 20 Ω (max) (@VGS = 1.2 V)
RDS(ON) = 8 Ω (max) (@VGS = 1.5 V)
RDS(ON) = 4 Ω (max) (@VGS = 2.5 V)
RDS(ON) = 3 Ω (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note1: Total rating
Marking Equivalent Circuit (top view) Unit: mm
Weight: 6.8 mg (typ.)
1 2 3 4
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