SSM6N29TU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1 , Q2 Common) Characteristic Symbol Test Conditions Min T ..
SSM6N35FU ,Small-signal MOSFET 2 in 1Electrical Characteristics ( ) (Ta = 25°C) Q1, Q2 CommonCharacteristics Symbol Test Condition Min ..
SSM6N36FE ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Ty ..
SSM6N36TU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Ty ..
SSM6N37FE ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Test Condition Min Typ ..
SSM6N43FU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Ty ..
STBP120CVDK6F ,Overvoltage protection device with thermal shutdownApplications(air discharge), up to ±8 kV (contact discharge) in typical application circuit with 1µ ..
STBP120DVDK6F ,Overvoltage protection device with thermal shutdownAbsolute maximum ratings . 13Table 3. Thermal data . . . . 14Table 4. Operating and AC ..
STBV32 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTBV32®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF D ..
STBV32-AP ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORApplications■ Compact fluorescent lamps (CFLS)TO-92 TO-92AP■ SMPS for battery chargerDescriptionFig ..
STBV42 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTBV42®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF D ..
STBV45 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTBV45®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF D ..
SSM6N29TU
Small-signal MOSFET 2 in 1
SSM6N29TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM6N29TU High-Speed Switching Applications • 1.8 V drive
• N-ch 2-in-1
• Low ON-resistance: Ron = 235 mΩ (max) (@VGS = 1.8 V)
Ron = 178 mΩ (max) (@VGS = 2.5 V)
Ron = 143 mΩ (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25 °C) (Q1 , Q2 Common) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure
rate, etc). Note 1: Mounted on an FR4 board. (total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm2 )
Electrical Characteristics (Ta = 25°C) (Q1 , Q2 Common) Unit: mm
Weight: 7 mg (typ.)
