SSM6N25TU ,Small-signal MOSFET 2 in 1absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
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STBV32 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTBV32®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF D ..
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SSM6N25TU
Small-signal MOSFET 2 in 1
SSM6N25TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
SSM6N25TU High Speed Switching Applications Optimum for high-density mounting in small packages
• Low on-resistance: Ron = 395mΩ (max) (@VGS = 1.8 V)
Ron = 190mΩ (max) (@VGS = 2.5 V)
Ron = 145mΩ (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. (total dissipation)
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Marking Equivalent Circuit (top view)
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 7.0 mg (typ.)
1 2 3 4
1 2 3 5
