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SSM6N16FU
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
SSM6N16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N16FU High Speed Switching Applications
Analog Switch Applications Suitable for high-density mounting due to compact package Low on resistance : Ron = 3.0 Ω (max) (@VGS = 4 V)
: Ron = 4.0 Ω (max) (@VGS = 2.5 V)
: Ron = 15 Ω (max) (@VGS = 1.5 V)
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Note: Total rating
Marking Equivalent Circuit
Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: g 5 4
1 2 3
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