SSM6N15FE ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Ty ..
SSM6N15FU ,High Speed Switching Applications Analog Switching ApplicationsSSM6N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FU High Speed Switch ..
SSM6N16FE ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsSSM6N16FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FE High Speed Switc ..
SSM6N16FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications Suitable for high-density mounting due to compact package Low on resistance : ..
SSM6N17FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications Suitable for high-density mounting due to compact package High drain-source v ..
SSM6N24TU ,Small-signal MOSFET 2 in 1absolute maximum ratings. Weight: 7.0 mg (typ.) Please design the appropriate reliability upon revi ..
STB90NF03L ,N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB90NF03LT4 ,N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB95NF03T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STB9NB50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STB9NB50T4 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STB9NB60 ,N-CHANNEL 600V -0.7 OHMSTB9NB60®2 2N - CHANNEL 600V - 0.7Ω - 9A - I PAK/D PAK PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTB9 ..
SSM6N15FE
Small-signal MOSFET 2 in 1
SSM6N15FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N15FE High Speed Switching Applications
Analog Switching Applications • Small package Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm2 × 6)
Marking Equivalent Circuit (top view)
Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
Unit: mm
Weight: 3mg (typ.)
6 5 4
1 2 3
6 5 4
1 2 3
