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SSM6L09FUTOSHIBAN/a3000avaiField Effect Transistor Silicon N/P Channel MOS Type Power Management Switch High Speed Switching Applications


SSM6L09FU ,Field Effect Transistor Silicon N/P Channel MOS Type Power Management Switch High Speed Switching ApplicationsElectrical Characteristics (Ta  25°C)Characteristics Symbol Test Condition Min Typ. MaxUnitGat ..
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STB80PF55T4 ,P-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
STB80PF55T4 ,P-CHANNEL 55VSTB80PF552P-CHANNEL 55V - 0.016 Ω - 80A D PAKSTripFET™ II POWER MOSFETPRELIMINARY DATATYPE V R IDSS ..
STB85NF3LL-1 ,N-CHANNEL 30V 0.006 OHM 85A TO-220/I2PAK LOW GATE CHARGE STRIPFET MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB85NF3LLT4 ,N-CHANNEL 30V 0.006 OHM 85A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..


SSM6L09FU
Field Effect Transistor Silicon N/P Channel MOS Type Power Management Switch High Speed Switching Applications
SSM6L09FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type
SSM6L09FU

Power Management Switch
High Speed Switching Applications Small package Low on resistance Q1: Ron = 0.7 Ω (max) (@VGS = 10 V) Q2: Ron = 2.7 Ω (max) (@VGS = −10 V)
Q1 Maximum Ratings (Ta �
�� � 25°C)
Q2 Maximum Ratings (Ta �
�� � 25°C)
Maximum Ratings (Q1, Q2 common) (Ta �
�� � 25°C) Tstg
Note1: Total rating, mounted on FR4 board
(25.4 mm � 25.4 mm � 1.6 t, Cu Pad: 0.32 mm2 � 6) Figure 1.
Unit: mm
Weight: 6.8 mg (typ.)
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