SSM6K411TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 3 4Characteristic Symbol Rating Unit Drain-Source voltage V 20 ..
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STB80NF55L-08 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 55 VDS GSV Drain-g ..
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STB80PF55 ,P-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
STB80PF55T4 ,P-CHANNEL 55VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB80PF55T4 ,P-CHANNEL 55VAPPLICATIONS■ MOTOR CONTROL■ DC-DC & DC-AC CONVERTERS
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SSM6K411TU
Small-signal MOSFET
SSM6K411TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K411TU Power Management Switch Applications High-Speed Switching Applications
• 2.5-V drive
• Low ON-resistance：RDS(ON) = 23.8 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 14.3 mΩ (max) (@VGS = 3.5 V)
RDS(ON) = 12 mΩ (max) (@VGS = 4.5 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking Equivalent Circuit (top view) Unit: mm
Weight: 7.0 mg (typ.)
1 2 3 4
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