SSM6K407TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25℃) (Note) 1,2,5,6 : Drain 3 : Gate Characteristic Symbol Rat ..
SSM6K411TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 3 4Characteristic Symbol Rating Unit Drain-Source voltage V 20 ..
SSM6L05FU ,Field Effect Transistor Silicon N/P Channel MOS Type Power Management Switch High Speed Switching ApplicationsElectrical Characteristics (Ta 25°C)Characteristics Symbol Test Condition Min Typ. MaxUnitGat ..
SSM6L09FU ,Field Effect Transistor Silicon N/P Channel MOS Type Power Management Switch High Speed Switching ApplicationsElectrical Characteristics (Ta 25°C)Characteristics Symbol Test Condition Min Typ. MaxUnitGat ..
SSM6L11TU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitGate ..
SSM6L12TU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate ..
STB80NF55L-06T4 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
STB80NF55L-08 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 55 VDS GSV Drain-g ..
STB80NF55L-08. ,N-CHANNEL 55VELECTRICAL CHARACTERISTICS (T =25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condit ..
STB80PF55 ,P-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
STB80PF55T4 ,P-CHANNEL 55VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB80PF55T4 ,P-CHANNEL 55VAPPLICATIONS■ MOTOR CONTROL■ DC-DC & DC-AC CONVERTERS
SSM6K407TU
Small-signal MOSFET
SSM6K407TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K407TU DC−DC Converter, Relay Drive and Motor Drive
Applications 4V drive Low ON-resistance : Ron = 440mΩ (max) (@VGS = 4 V) : Ron = 300mΩ (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25℃) (Note) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Unit: mm
Weight: 7mg (typ.)
