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SSM6K22FETOSHIBAN/a20000avaiSmall-signal MOSFET


SSM6K22FE ,Small-signal MOSFETabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
SSM6K24FE ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate l ..
SSM6K25FE ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitGate ..
SSM6K34TU , High Current Switching Applications
SSM6K403TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25˚C) (Note) 1,2,5,6 : Drain Characteristic Symbol Rating Unit 3 : ..
SSM6K404TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25˚C) 25Characteristic Symbol Rating Unit 3Drain–source voltage V 20 ..
STB80NF10T4 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB80NF10T4 ,N-CHANNEL 100VAPPLICATIONS■ HIGH-EFFICIENCY DC-DC CONVERTERS■ UPS AND MOTOR CONTROL
STB80NF10T4 ,N-CHANNEL 100VSTB80NF10N-CHANNEL 100V - 0.012Ω - 80A D2PAKLOW GATE CHARGE STripFET™ POWER MOSFETTYPE V R IDSS DS( ..
STB80NF55-06 ,N-CHANNEL 55VSTB80NF55-06STP80NF55-06 STP80NF55-06FP2N-CHANNEL 55V - 0.005 Ω - 80A TO-220/TO-220FP/D PAKSTripFET ..
STB80NF55-06T4 ,N-CHANNEL 55VSTB80NF55-06 STB80NF55-06-1STP80NF55-06 STP80NF55-06FP²N-CHANNEL 55V - 0.005 Ω - 80A TO-220/TO-220F ..
STB80NF55-06T4 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTB80NF55-06/-1 STP80NF55-06FPSTP80NF55-06V Drai ..


SSM6K22FE
Small-signal MOSFET
SSM6K22FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ)
SSM6K22FE

High Current Switching Applications
DC-DC Converter Suitable for high-density mounting due to compact package Low on resistance: RDS(ON) = 170 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 230 mΩ (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )
Marking Equivalent Circuit (Top View)

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 3 mg (typ.)
123 56
1 2 3
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