SSM6K210FE ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain-source voltage V 30 V ..
SSM6K211FE ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain-source voltage V 20 V ..
SSM6K22FE ,Small-signal MOSFETabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
SSM6K24FE ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate l ..
SSM6K25FE ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitGate ..
SSM6K34TU , High Current Switching Applications
STB80NF10 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 100 VDS GSV Drain ..
STB80NF10T4 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB80NF10T4 ,N-CHANNEL 100VAPPLICATIONS■ HIGH-EFFICIENCY DC-DC CONVERTERS■ UPS AND MOTOR CONTROL
STB80NF10T4 ,N-CHANNEL 100VSTB80NF10N-CHANNEL 100V - 0.012Ω - 80A D2PAKLOW GATE CHARGE STripFET™ POWER MOSFETTYPE V R IDSS DS( ..
STB80NF55-06 ,N-CHANNEL 55VSTB80NF55-06STP80NF55-06 STP80NF55-06FP2N-CHANNEL 55V - 0.005 Ω - 80A TO-220/TO-220FP/D PAKSTripFET ..
STB80NF55-06T4 ,N-CHANNEL 55VSTB80NF55-06 STB80NF55-06-1STP80NF55-06 STP80NF55-06FP²N-CHANNEL 55V - 0.005 Ω - 80A TO-220/TO-220F ..
SSM6K210FE
Small-signal MOSFET
SSM6K210FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K210FE High-Speed Switching Applications Power Management Switch Applications
• 4.0-V drive Low ON-resistance: Ron = 371 mΩ (max) (@VGS = 4.0 V),
Ron = 228 mΩ (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25˚C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking Equivalent Circuit (top view) Unit: mm
Weight: 3 mg (typ.)
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