SSM6K202FE ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitV I = ..
SSM6K203FE ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain–source voltage V 20 V ..
SSM6K204FE ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain–source voltage V 20 V ..
SSM6K210FE ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain-source voltage V 30 V ..
SSM6K211FE ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain-source voltage V 20 V ..
SSM6K22FE ,Small-signal MOSFETabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
STB80NF03L-04-1 ,N-CHANNEL 30VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ MOTOR CONTROL, AUDIO AMPLIFIERS■ DC-DC & DC-AC CO ..
STB80NF03L-04T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)30 VDS GSV Drain-g ..
STB80NF10 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 100 VDS GSV Drain ..
STB80NF10T4 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB80NF10T4 ,N-CHANNEL 100VAPPLICATIONS■ HIGH-EFFICIENCY DC-DC CONVERTERS■ UPS AND MOTOR CONTROL
STB80NF10T4 ,N-CHANNEL 100VSTB80NF10N-CHANNEL 100V - 0.012Ω - 80A D2PAKLOW GATE CHARGE STripFET™ POWER MOSFETTYPE V R IDSS DS( ..
SSM6K202FE
Small-signal MOSFET
SSM6K202FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K202FE High-Speed Switching Applications Power Management Switch Applications • 1.8 V drive
• Low ON-resistance: Ron = 145 mΩ (max) (@VGS = 1.8V)
Ron = 101 mΩ (max) (@VGS = 2.5V)
Ron = 85 mΩ (max) (@VGS = 4.0V)
Absolute Maximum Ratings (Ta = 25˚C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C) Note 2: Pulse test
Unit: mm
Weight: 3 mg (typ.)
