SSM6J25FE ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate l ..
SSM6J26FE ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate l ..
SSM6J401TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25˚C) 3 4Characteristic Symbol Rating Unit Drain–source voltage V −3 ..
SSM6J402TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25˚C) 3 4Characteristic Symbol Rating Unit Drain–source voltage V −3 ..
SSM6J501NU ,Small-signal MOSFETabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 8.5 ..
SSM6J503NU , Power Management Switch Applications
STB75NH02L ,N-CHANNEL 24V 0.0062 OHM 75A D2PAK STRIPFET III POWER MOSFETSTB75NH02L2N-CHANNEL 24V - 0.0062Ω -75A - D PAKSTripFET™ III POWER MOSFETTARGET DATATYPE V R IDSS D ..
STB75NH02LT4 ,N-CHANNEL 24V 0.0062 OHM 75A D2PAK STRIPFET III POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV (1)Drain-source Voltage Rating 30 VspikeV Drai ..
STB772 , PNP Silicon Transistor
STB7NB60 ,NSTB7NB60®2 2N - CHANNEL 600V - 1.0 OMH - 7.2A - I PAK/D PAK PowerMESH™ MOSFETTYPE V R IDSS DS(on) ..
STB7NB60-1 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTB7NB60®2 2N - CHANNEL 600V - 1.0 OMH - 7.2A - I PAK/D PAK PowerMESH™ MOSFETTYPE V R IDSS DS(on) ..
STB7NB60T4 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTB7NB60®2 2N - CHANNEL 600V - 1.0 OMH - 7.2A - I PAK/D PAK PowerMESH™ MOSFETTYPE V R IDSS DS(on) ..
SSM6J25FE
Small-signal MOSFET
SSM6J25FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
SSM6J25FE High Speed Switching Applications Optimum for high-density mounting in small packages
• Low on-resistance: Ron = 260mΩ (max) (@VGS = -4 V)
Ron = 430mΩ (max) (@VGS = -2.5 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Marking Equivalent Circuit (top view)
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 3.0 mg (typ.)
1 2 3 4
1 2 3 5
