SSM6J23FE ,Small-signal MOSFETabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
SSM6J25FE ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate l ..
SSM6J26FE ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate l ..
SSM6J401TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25˚C) 3 4Characteristic Symbol Rating Unit Drain–source voltage V −3 ..
SSM6J402TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25˚C) 3 4Characteristic Symbol Rating Unit Drain–source voltage V −3 ..
SSM6J501NU ,Small-signal MOSFETabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 8.5 ..
STB7102TR ,0.1/2.5 GHZ SI MMIC BUFFER AMPLIFIERABSOLUTE MAXIMUM RATINGS Symbol Parameter Conditions Value UnitVSupply voltage 3.3 VccoTStorage tem ..
STB75NF20 ,N-channel 200 V, 0.028 Ohm typ., 75 A STripFET(TM) Power MOSFET in D2PAK packageElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. On/off statesSymbol Para ..
STB75NF75 ,N-CHANNEL 75VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTB75NF75 STP75NF75FPSTP75NF75V Drain-source Vol ..
STB75NH02L ,N-CHANNEL 24V 0.0062 OHM 75A D2PAK STRIPFET III POWER MOSFETSTB75NH02L2N-CHANNEL 24V - 0.0062Ω -75A - D PAKSTripFET™ III POWER MOSFETTARGET DATATYPE V R IDSS D ..
STB75NH02LT4 ,N-CHANNEL 24V 0.0062 OHM 75A D2PAK STRIPFET III POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV (1)Drain-source Voltage Rating 30 VspikeV Drai ..
STB772 , PNP Silicon Transistor
SSM6J23FE
Small-signal MOSFET
SSM6J23FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
SSM6J23FE High Current Switching Applications
DC-DC Converter Suitable for high-density mounting due to compact package Low on-resistance: Ron = 160 mΩ (max) (@VGS = -4.0 V) Ron = 210 mΩ (max) (@VGS = -2.5 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Marking Equivalent Circuit
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic discharge. Operators should wear anti-static clothing and use containers and
other objects that are made of anti-static materials.
Unit: mm
Weight: 3 mg (typ.)
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