SSM6J207FE ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitV I = ..
SSM6J212FE ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V -20 V ..
SSM6J213FE ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V -20 V ..
SSM6J214FE ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V -30 V ..
SSM6J21TU , High Current Switching Applications
SSM6J21TU , High Current Switching Applications
STB70NFS03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB70NFS03LT4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Dain-source Voltage (V = 0) 30 VDS GSV Drain-g ..
STB70NH03LT4 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB7101 ,0.9/1.9GHZ BROAD BAND PRE-POWER AMPLIFIERABSOLUTE MAXIMUM RATINGS Symbol Parameter Conditions Value Unit oV Supply voltage 4.5 Vcc T = +25 C ..
STB7101TR ,0.9/1.9GHZ BROAD BAND PRE-POWER AMPLIFIERapplications43 4 3(0.9/1.9GHz), uses a 20 GHz F silicon bipolarTprocess. This IC is a wide range am ..
STB7102TR ,0.1/2.5 GHZ SI MMIC BUFFER AMPLIFIERABSOLUTE MAXIMUM RATINGS Symbol Parameter Conditions Value UnitVSupply voltage 3.3 VccoTStorage tem ..
SSM6J207FE
Small-signal MOSFET
SSM6J207FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM6J207FE High-Speed Switching Applications 4 V drive
• Low ON-resistance: Ron = 491 mΩ (max) (@VGS = −4 V)
Ron = 251 mΩ (max) (@VGS = −10 V)
Absolute Maximum Ratings (Ta = 25˚C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C) Note 2: Pulse test
Unit: mm
Weight: 3 mg (typ.)
