SSM5P15FE ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Symbol Test Condition MIN TYP ..
SSM6E01TU ,Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer) Load Switch Applicationsfeatures low R and low-voltage operation DS (ON) Q1 Maximum Ratings (Ta 25°C)Characteristics ..
SSM6J06FU ,Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching ApplicationsSSM6J06FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J06FU Power Management ..
SSM6J07FU ,Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching ApplicationsSSM6J07FU TOSHIBA Transistor Silicon P Channel MOS Type SSM6J07FU Power Management Switch Unit: ..
SSM6J08FU ,Field Effect TransistorSSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM6J08FU Power ..
SSM6J205FE ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. MaxUnitV I ..
STB6NK60Z ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETSTP6NK60Z - STP6NK60ZFPSTB6NK60Z - STB6NK60Z-12 2N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D PAK/I P ..
STB6NK60Z-1 ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STB6NK60ZT4 ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP6NK60ZSTB6NK60Z STP6NK60ZFPSTB6NK60Z-1V Drain ..
STB6NK90Z ,N-CHANNEL 900V 1.75 OHM 5.8A TO-220/TO-220FP D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP6NK90Z / STB6NK90Z STP6NK90ZFPV Drain-source ..
STB6NK90ZT4 ,N-CHANNEL 900VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STB70NF02LT4 ,N-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
SSM5P15FE
Small-signal MOSFET 2 in 1
SSM5P15FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM5P15FE High Speed Switching Applications
Analog Switch Applications
• Small package Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V)
: Ron = 32 Ω (max) (@VGS = −2.5 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm2 × 5)
Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 0.003g(typ.)
123 4 2 3
