SSM5N05FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low on resistance : R = 0.8 Ω (max) (@V = 4 V) on GS : ..
SSM5N15FE ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications Small package Low ON resistance : R = 4.0 Ω (max) (@V = 4 V) on GS : R = 7.0 ..
SSM5N15FU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Symbol Test Condition Min Typ ..
SSM5N16FE ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switching ApplicationsApplications Suitable for high-density mounting due to compact package Low on resistance: ..
SSM5N16FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switching ApplicationsApplications Suitable for high-density mounting due to compact package Low on resistance: ..
SSM5P15FE ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Symbol Test Condition MIN TYP ..
STB6NC60 ,N-CHANNEL 600V 1.0 OHMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)6NC60(-1) STP6NC60FPV Drain-source Voltage ..
STB6NC60-1 ,N-CHANNEL 600V 1.0 OHMELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB6NC60T4 ,N-CHANNEL 600V 1.0 OHMELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB6NK60Z ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETSTP6NK60Z - STP6NK60ZFPSTB6NK60Z - STB6NK60Z-12 2N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D PAK/I P ..
STB6NK60Z-1 ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STB6NK60ZT4 ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP6NK60ZSTB6NK60Z STP6NK60ZFPSTB6NK60Z-1V Drain ..
SSM5N05FU
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
SSM5N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM5N05FU High Speed Switching Applications Small package Low on resistance : Ron = 0.8 Ω (max) (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V) Low gate threshold voltage
Maximum Ratings (Ta ��� � 25°C) (Q1, Q2 Common)
Note1: Total rating, mounted on FR4 board
(25.4 mm � 25.4 mm � 1.6 t, Cu Pad: 0.32 mm2 � 5)
Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 6.2 mg (typ.)
