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SSM5G02TU
Multi-chip discrete device (P-ch + SBD)
SSM5G02TU
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode
SSM5G02TU DC-DC Converter • Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF
Absolute Maximum Ratings (Ta = 25°C) MOSFET
Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY DIODE
Absolute Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2)
Note 2: The pulse width limited by max channel temperature.
Note 3: Operating temperature limited by max channel temperature and max junction temperature.
Unit: mm
Weight: 7 mg (typ.)
