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SSM3K7002FUTOSHIBAN/a159900avaiSmall-signal MOSFET


SSM3K7002FU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ MaxUnitGate l ..
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STB55NF03L ,N-CHANNEL 30V
STB55NF03LT4 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
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STB55NF06LT4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP55NF06LSTP55NF06LFPSTB55NF06L/-1V Drain-sourc ..
STB55NF06T4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP_B55NF06(-1) STP55NF06FPV Drain-source Voltag ..


SSM3K7002FU
Small-signal MOSFET
SSM3K7002FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K7002FU

High Speed Switching Applications
Analog Switch Applications • Small package Low ON resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V)
: Ron = 3.0 Ω (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6mm2 × 3)
Marking Equivalent Circuit (top view)

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
1 2
1 2
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