SSM3K37MFV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitV I = ..
SSM3K43FS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max UnitV I ..
SSM3K44FS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitGate l ..
SSM3K44MFV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate l ..
SSM3K48FU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnit V I ..
SSM3K7002BFS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ MaxUnitGate l ..
STB40NS15T4 ,N-CHANNEL 150V 0.042 OHM 40A D2PAK MESH OVERLAY MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 150 VDS GSV Drain ..
STB45NF06 ,N-CHANNEL 60V 0.022OHM 38A D2PAK STRIPFET POWER MOSFET
STB45NF06T4 ,N-CHANNEL 60V 0.022 OHM 38A TO-220/D2PAK STRIPFET MOSFETAbsolute Maximum ratings Symbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drai ..
STB45NF3LLT4 ,N-CHANNEL 30V 0.014 OHM 45A TO-220/TO-220FP/D2PAK STRIPFET II POWER MOSFETSTP45NF3LL - STP45NF3LLFPSTB45NF3LL2N-CHANNEL 30V - 0.014Ω - 45A TO-220 - TO220FP - D PAKSTripFET I ..
STB4NK60Z ,N-CHANNEL 600Vapplications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutiona ..
STB4NK60ZT4 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP4NK60ZSTD4NK60ZSTB4NK60Z STP4NK60ZFPSTD4NK60Z ..
SSM3K37MFV
Small-signal MOSFET
SSM3K37MFV
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K37MFV High Speed Switching Applications
Analog Switch Applications
• 1.5-V drive
• Low ON-resistance RDS(ON) = 5.60Ω (max) (@VGS = 1.5 V)
RDS(ON) = 4.05Ω (max) (@VGS = 1.8 V)
RDS(ON) = 3.02Ω (max) (@VGS = 2.5 V)
RDS(ON) = 2.20Ω (max) (@VGS = 4.5 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1:Mounted on a FR4 board (25.4 mm × 25.4 mm × 1.6 mm)
Marking Equivalent Circuit nit: mm
Weight: 1.5mg (typ.)
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