SSM3K36TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max UnitV I ..
SSM3K37MFV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitV I = ..
SSM3K43FS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max UnitV I ..
SSM3K44FS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitGate l ..
SSM3K44MFV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate l ..
SSM3K48FU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnit V I ..
STB40NF10T4 ,N-CHANNEL 100VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 100 VDS GSV Drain ..
STB40NS15T4 ,N-CHANNEL 150V 0.042 OHM 40A D2PAK MESH OVERLAY MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 150 VDS GSV Drain ..
STB45NF06 ,N-CHANNEL 60V 0.022OHM 38A D2PAK STRIPFET POWER MOSFET
STB45NF06T4 ,N-CHANNEL 60V 0.022 OHM 38A TO-220/D2PAK STRIPFET MOSFETAbsolute Maximum ratings Symbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drai ..
STB45NF3LLT4 ,N-CHANNEL 30V 0.014 OHM 45A TO-220/TO-220FP/D2PAK STRIPFET II POWER MOSFETSTP45NF3LL - STP45NF3LLFPSTB45NF3LL2N-CHANNEL 30V - 0.014Ω - 45A TO-220 - TO220FP - D PAKSTripFET I ..
STB4NK60Z ,N-CHANNEL 600Vapplications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutiona ..
SSM3K36TU
Small-signal MOSFET
SSM3K36TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K36TU High-Speed Switching Applications
• 1.5-V drive Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V)
: Ron = 1.14 Ω (max) (@VGS = 1.8 V)
: Ron = 0.85 Ω (max) (@VGS = 2.5 V)
: Ron = 0.66 Ω (max) (@VGS = 4.5 V)
: Ron = 0.63 Ω (max) (@VGS = 5.0 V)
Absolute Maximum Ratings (Ta = 25˚C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Note2: Mounted on a ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2)
Marking Equivalent Circuit (top view) Unit: mm
Weight: 6.6 mg (typ.)
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