SSM3K35MFV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitGate le ..
SSM3K36FS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max UnitV I ..
SSM3K36MFV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max UnitV I ..
SSM3K36TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max UnitV I ..
SSM3K37MFV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitV I = ..
SSM3K43FS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max UnitV I ..
STB40NF10 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STB40NF10T4 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On/OffSymbol Parameter ..
STB40NF10T4 ,N-CHANNEL 100VFeatures Figure 1: PackageTYPE V R IDSS DS(on) DSTB40NF10T4 100 V < 0.028 Ω 50 A
SSM3K35MFV
Small-signal MOSFET
SSM3K35MFV
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K35MFV High-Speed Switching Applications Analog Switch Applications 1.2 V drive Low ON-resistance : Ron = 20 Ω (max) (@VGS = 1.2 V)
: Ron = 8 Ω (max) (@VGS = 1.5 V)
: Ron = 4 Ω (max) (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25˚C) Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.585 mm2)
Electrical Characteristics (Ta = 25°C) Note 2: Pulse test
Unit: mm
Weight: 1.5 mg (typ.)
