SSM3K309T ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitV I = ..
SSM3K310T ,Small-signal MOSFETabsolute maximum ratings. JEITA ― Please design the appropriate reliability upon reviewing the Tosh ..
SSM3K310T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) ２３Characteristics Symbol Rating Unit Drain-Source voltage V 20 ..
SSM3K315T ,Small-signal MOSFETabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba JEDE ..
SSM3K316T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain–source voltage V 30 V ..
SSM3K320T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) １Characteristic Symbol Rating Unit ２３Drain-Source voltage V 30 ..
STB3N62K3 , N-channel 620 V, 2.2 OHM , 2.7 A SuperMESH3 Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK
STB3NK60ZT4 ,N-CHANNEL 600VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PF ..
STB40NF10 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STB40NF10T4 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On/OffSymbol Parameter ..
STB40NF10T4 ,N-CHANNEL 100VFeatures Figure 1: PackageTYPE V R IDSS DS(on) DSTB40NF10T4 100 V < 0.028 Ω 50 A
SSM3K309T
Small-signal MOSFET
SSM3K309T
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K309T Power Management Switch Applications High-Current Switching Applications • 1.8V drive Low on-resistance : Ron = 47mΩ (max) (@VGS = 1.8V)
: Ron = 35mΩ (max) (@VGS = 2.5V)
: Ron = 31mΩ (max) (@VGS = 4.0V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C) Unit: mm
Weight: 10 mg (typ.)
