SSM3K301T ,Small-signal MOSFETabsolute maximum ratings. Weight: 10 mg (typ.) Please design the appropriate reliability upon revie ..
SSM3K301T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit V 20 V Drain-Source voltag ..
SSM3K302T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage V 30 V ..
SSM3K303T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage V 30 V ..
SSM3K309T ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitV I = ..
SSM3K310T ,Small-signal MOSFETabsolute maximum ratings. JEITA ― Please design the appropriate reliability upon reviewing the Tosh ..
STB36NF03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB36NF03LT4 ,N-CHANNEL 30V
STB3N62K3 , N-channel 620 V, 2.2 OHM , 2.7 A SuperMESH3 Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK
STB3NK60ZT4 ,N-CHANNEL 600VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PF ..
STB40NF10 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STB40NF10T4 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On/OffSymbol Parameter ..
SSM3K301T
Small-signal MOSFET
SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K301T Power Management Switch Applications
High-Speed Switching Applications 1.8 V drive
• Low ON-resistance: Ron = 110 mΩ (max) (@VGS = 1.8 V)
Ron = 74 mΩ (max) (@VGS = 2.5 V)
Ron = 56 mΩ (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”)
and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C) Weight: 10 mg (typ.) Unit: mm
