SSM3K16TE ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications Suitable for high-density mounting due to compact package Low on resistance : ..
SSM3K16TE ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsSSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switc ..
SSM3K17FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsSSM3K17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU High Speed Switc ..
SSM3K301T ,Small-signal MOSFETabsolute maximum ratings. Weight: 10 mg (typ.) Please design the appropriate reliability upon revie ..
SSM3K301T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit V 20 V Drain-Source voltag ..
SSM3K302T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage V 30 V ..
STB30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFETElectrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Para ..
STB30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 200 VDS GSV Gate- ..
STB30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFETapplicationsDescriptionThis Power MOSFET series realized with STMicroelectronics unique STripFET pr ..
STB30NS15 ,N-CHANNEL 150VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 150 VDS GSV Drain ..
STB36NF03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB36NF03LT4 ,N-CHANNEL 30V
SSM3K16TE
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
SSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K16TE High Speed Switching Applications
Analog Switch Applications Suitable for high-density mounting due to compact package Low on resistance : Ron = 3.0 Ω (max) (@VGS = 4 V)
: Ron = 4.0 Ω (max) (@VGS = 2.5 V)
: Ron = 15 Ω (max) (@VGS = 1.5 V)
Maximum Ratings (Ta = 25°C)
Marking Equivalent Circuit
Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 2.2 mg (typ.)
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