SSM3K16FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications Suitable for high-density mounting due to compact package Low on resistance: ..
SSM3K16FV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate l ..
SSM3K16TE ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications Suitable for high-density mounting due to compact package Low on resistance : ..
SSM3K16TE ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsSSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switc ..
SSM3K17FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsSSM3K17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU High Speed Switc ..
SSM3K301T ,Small-signal MOSFETabsolute maximum ratings. Weight: 10 mg (typ.) Please design the appropriate reliability upon revie ..
STB30NE06L ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STB30NF10 ,N-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTB30NF10 STP30NF10FPSTP30NF10V Drain-source Vol ..
STB30NF10T4 ,N-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTB30NF10 STP30NF10FPSTP30NF10V Drain-source Vol ..
STB30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFETElectrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Para ..
STB30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 200 VDS GSV Gate- ..
STB30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFETapplicationsDescriptionThis Power MOSFET series realized with STMicroelectronics unique STripFET pr ..
SSM3K16FU
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
SSM3K16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K16FU High Speed Switching Applications
Analog Switching Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V)
Maximum Ratings (Ta = 25°C) Note: Mounted on FR4 board
(25.4 mm � 25.4 mm � 1.6 t, Cu Pad: 0.6 mm2 � 3)
Marking Equivalent Circuit
Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
Unit: mm
1 2
