SSM3K123TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 1Characteristics Symbol Rating Unit 32Drain-Source voltage V 2 ..
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STB20NK50Z ,N-CHANNEL 500VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STB20NK50Z-S ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)500 VDS GSV Drain-g ..
STB20NK50ZT4 ,N-CHANNEL 500VSTP20NK50Z - STW20NK50ZSTB20NK50Z - STB20NK50Z-S2 2N-CHANNEL 500V -0.23Ω - 17A TO-220/D PAK/I SPAK/ ..
STB20NM50FD ,N-CHANNEL 500V 0.20 OHM 20A D2PAK FDMESH POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB20NM50T4 ,N-CHANNEL 550V @ TjmaxELECTRICAL CHARACTERISTICS (T =25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condit ..
STB20NM50T4 ,N-CHANNEL 550V @ TjmaxABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)20NM50(-1) STP20NM50FPV Gate- source Volta ..
SSM3K123TU
Small-signal MOSFET
SSM3K123TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K123TU Power Management Switch Applications
High-Speed Switching Applications 1.5 V drive
• Low ON-resistance: Ron = 66 mΩ (max) (@VGS = 1.5 V) Ron = 43 mΩ (max) (@VGS = 1.8 V)
Ron = 32 mΩ (max) (@VGS = 2.5 V)
Ron = 28 mΩ (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. (25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2 ) Note 2: Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C) Unit: mm
Weight: 6.6 mg (typ.)
Unit: mm
Weight: 6.6 mg (typ.)
